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Properties of transparent conducting Indium Tin Oxide films deposited by reactive e-beam evaporation on heated glass

TitleProperties of transparent conducting Indium Tin Oxide films deposited by reactive e-beam evaporation on heated glass
Publication TypePresentazione a Congresso
Year of Publication1999
AuthorsSinno, G., Minarini Carla, Loreti S., Di Francia G., and Salluzzo Antonio
Conference NameDiffusion and Defect Data Pt.B: Solid State Phenomena
PublisherScitec Publications Ltd., Zurich, Switzerland
Conference LocationSchwabisch Gmund, Ger
KeywordsCarrier concentration, Conductive films, Crystal orientation, Electron beam evaporation, Electron beams, Film growth, glass, Indium compounds, Indium tin oxide, Mass Spectrometry, Oxides, Polycrystalline materials, Transparency, Transparent conducting oxides (TCO), Vapor deposition, X ray crystallography

Indium Tin Oxide (ITO) films have been deposited on glass substrate at 260 °C by e-beam evaporation of In-Sn home-made alloys in an oxygen atmosphere at a partial pressure of 5·10-4 mbar. The Sn/In weight ratio has been changed in the source in order to obtain the best optical and electrical properties of ITO films. The films elemental weight concentrations have been estimated by Inductively Coupled Plasma-Mass Spectroscopy. Tin concentration has been measured in the range from 0.15 to 16 wt%. Measurements performed by Hall four-point probe technique resulted in carrier concentration from 1.8·1019 to 1.12·1021 cm-3 and Hall mobility from 7.4 to 117 cm2/Vs. XRD measurements revealed a polycrystalline structure of the films. Increasing tin concentration the preferential orientation of crystallographic planes changes from [400] to [222] direction. Maximum crystalline domains come out to have a size of about 1200 angstroms. ITO films with the best electrical and optical properties have tin concentration between 5 and 8 wt%. Correspondingly a resistivity of about 2·10-4 Ω cm and an averaged transmittance in the range of wavelengths 400-800 nm of about 85% have been measured.

Citation KeySinno1999249