| Titolo | Nanostructured porous silicon for gas sensor applications |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2002 |
| Autori | Di Francia, G., M. Noce Della, La Ferrara V., Lancellotti L., Morvillo Pasquale, and Quercia L. |
| Rivista | Materials Science and Technology |
| Volume | 18 |
| Paginazione | 767-771 |
| ISSN | 02670836 |
| Parole chiave | chemical reaction, chemical structure, conference paper, device, Electric conductivity, environment, gas analysis, Membrane, molecular model, Photoluminescence, polarimetry, Porosity, sensor |
| Abstract | The response of two different types of nanostructured gas sensor to oxygen has been investigated. The first (optical) is based on the photoluminescence quenching effect of a porous silicon sample, the second on the changes of the electrical conductance v. environment of a porous silicon free standing membrane on an insulating neutral substrate. The response of both the devices to oxygen have been measured and compared. The optical based gas sensor exhibits a quenching following the Stern - Volmer model. The corresponding reactivity rate constant is found to depend on a characteristic nanodimension of the wire. The electrically operated sensor is more sensitive to oxygen and shows an opposite behavior if exposed to a reducing environment. © 2002 IoM Communications Ltd. |
| Note | cited By 10 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036650143&doi=10.1179%2f026708302225003848&partnerID=40&md5=bff8099814641bcbaecf12430d49dcff |
| DOI | 10.1179/026708302225003848 |
| Citation Key | DiFrancia2002767 |
