|Title||Nanostructured porous silicon for gas sensor applications|
|Publication Type||Articolo su Rivista peer-reviewed|
|Year of Publication||2002|
|Authors||Di Francia, G., M. Noce Della, La Ferrara V., Lancellotti L., Morvillo P., and Quercia L.|
|Journal||Materials Science and Technology|
|Keywords||chemical reaction, chemical structure, conference paper, device, Electric conductivity, environment, gas analysis, Membrane, molecular model, Photoluminescence, polarimetry, Porosity, sensor|
The response of two different types of nanostructured gas sensor to oxygen has been investigated. The first (optical) is based on the photoluminescence quenching effect of a porous silicon sample, the second on the changes of the electrical conductance v. environment of a porous silicon free standing membrane on an insulating neutral substrate. The response of both the devices to oxygen have been measured and compared. The optical based gas sensor exhibits a quenching following the Stern - Volmer model. The corresponding reactivity rate constant is found to depend on a characteristic nanodimension of the wire. The electrically operated sensor is more sensitive to oxygen and shows an opposite behavior if exposed to a reducing environment. © 2002 IoM Communications Ltd.
cited By 10