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PASSIVATION IN POLY-SILICON SOLAR CELLS BY ION-GUN HYDROGEN IMPLANT.

TitoloPASSIVATION IN POLY-SILICON SOLAR CELLS BY ION-GUN HYDROGEN IMPLANT.
Tipo di pubblicazionePresentazione a Congresso
Anno di Pubblicazione1985
AutoriCapizzi, M., Coluzza C., Della Sala Dario, Frova A., Sardi L., Ragghianti D., Prudenziati M., and Moro L.
Conference NameCommission of the European Communities, (Report) EUR
EditoreD. Reidel Publ Co, Dordrecht, Neth
Conference LocationLondon, Engl
ISBN Number9027721041
Parole chiaveHYDROGEN PASSIVATION, ION-GUN HYDROGEN IMPLANT, KAUFMAN SOURCE, Photovoltaic cells, POLY-SILICON SOLAR CELLS, SEMICONDUCTING SILICON - Ion Implantation, Solar cells
Abstract

The change of the basic cell parameters, due to hydrogen passivation with a Kaufmann source, has been measured as a function of passivation temperature, ion-beam energy, and dose rate. The inverse relationship between the observed improvements and the initial values of the parameters is evidentiated. The contributions of annealing and molecular hydrogen passivation are independently evaluated. The results are explained by a straight model of thermally activated hydrogen diffusion, with an amplitude factor which contains the depth of implantation.

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0022194891&partnerID=40&md5=d9e015f2e155e99bb0952ba1297a70c7
Citation KeyCapizzi19851001