| Title | PASSIVATION IN POLY-SILICON SOLAR CELLS BY ION-GUN HYDROGEN IMPLANT. |
|---|---|
| Publication Type | Presentazione a Congresso |
| Year of Publication | 1985 |
| Authors | Capizzi, M., Coluzza C., Della Sala Dario, Frova A., Sardi L., Ragghianti D., Prudenziati M., and Moro L. |
| Conference Name | Commission of the European Communities, (Report) EUR |
| Publisher | D. Reidel Publ Co, Dordrecht, Neth |
| Conference Location | London, Engl |
| ISBN Number | 9027721041 |
| Keywords | HYDROGEN PASSIVATION, ION-GUN HYDROGEN IMPLANT, KAUFMAN SOURCE, Photovoltaic cells, POLY-SILICON SOLAR CELLS, SEMICONDUCTING SILICON - Ion Implantation, Solar cells |
| Abstract | The change of the basic cell parameters, due to hydrogen passivation with a Kaufmann source, has been measured as a function of passivation temperature, ion-beam energy, and dose rate. The inverse relationship between the observed improvements and the initial values of the parameters is evidentiated. The contributions of annealing and molecular hydrogen passivation are independently evaluated. The results are explained by a straight model of thermally activated hydrogen diffusion, with an amplitude factor which contains the depth of implantation. |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0022194891&partnerID=40&md5=d9e015f2e155e99bb0952ba1297a70c7 |
| Citation Key | Capizzi19851001 |
