Electrical stress degradation of small-grain polysilicon thin-film transistors

TitoloElectrical stress degradation of small-grain polysilicon thin-film transistors
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2007
AutoriPalumbo, Domenico, Masala S., Tassini P., Rubino A., and Della Sala Dario
RivistaIEEE Transactions on Electron Devices
Volume54
Paginazione476-482
ISSN00189383
Parole chiaveCharge carriers, Computer simulation, Density-of-states, Electrical stress, Fixed charge, Hot carriers, Hydrogenation, Polysilicon, Reliability, Stresses, Thin film transistors
Astratto

This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the aid of numerical simulations, we investigate the effects of static stress using two types of procedures: the on stress and the hot carrier stress. Results show that the variations of trap state density into the whole polysilicon layer and not only near the drain junction are responsible for the degradation of TFTs performances in both the two types of stress and that the interface trap states play a negligible role compared to the bulk trap states. © 2007 IEEE.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-33947661928&doi=10.1109%2fTED.2006.890377&partnerID=40&md5=d92da2ffe98671a221bc7088bab51c43
DOI10.1109/TED.2006.890377