|Titolo||Electrical stress degradation of small-grain polysilicon thin-film transistors|
|Tipo di pubblicazione||Articolo su Rivista peer-reviewed|
|Anno di Pubblicazione||2007|
|Autori||Palumbo, Domenico, Masala S., Tassini P., Rubino A., and Della Sala Dario|
|Rivista||IEEE Transactions on Electron Devices|
|Parole chiave||Charge carriers, Computer simulation, Density-of-states, Electrical stress, Fixed charge, Hot carriers, Hydrogenation, Polysilicon, Reliability, Stresses, Thin film transistors|
This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the aid of numerical simulations, we investigate the effects of static stress using two types of procedures: the on stress and the hot carrier stress. Results show that the variations of trap state density into the whole polysilicon layer and not only near the drain junction are responsible for the degradation of TFTs performances in both the two types of stress and that the interface trap states play a negligible role compared to the bulk trap states. © 2007 IEEE.
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