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Electrical stress degradation of small-grain polysilicon thin-film transistors

TitleElectrical stress degradation of small-grain polysilicon thin-film transistors
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2007
AuthorsPalumbo, Domenico, Masala S., Tassini Paolo, Rubino A., and Della Sala Dario
JournalIEEE Transactions on Electron Devices
KeywordsCharge carriers, Computer simulation, Density-of-states, Electrical stress, Fixed charge, Hot carriers, Hydrogenation, Polysilicon, Reliability, Stresses, Thin film transistors

This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the aid of numerical simulations, we investigate the effects of static stress using two types of procedures: the on stress and the hot carrier stress. Results show that the variations of trap state density into the whole polysilicon layer and not only near the drain junction are responsible for the degradation of TFTs performances in both the two types of stress and that the interface trap states play a negligible role compared to the bulk trap states. © 2007 IEEE.


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Citation KeyPalumbo2007476