| Titolo | Solid-state pressureless sintering of silicon carbide below 2000°C |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2014 |
| Autori | Magnani, G., Sico G., Brentari A., and Fabbri Paride |
| Rivista | Journal of the European Ceramic Society |
| Volume | 34 |
| Paginazione | 4095-4098 |
| ISSN | 09552219 |
| Parole chiave | Boron carbide, Ceramics, Conventional sintering, High sintering temperatures, Mechanical properties, Microstructure, Microstructure and mechanical properties, Pressure-less sintering, Silicon carbide, Silicon carbide powder, Sintering, Sintering temperatures, Two-step sintering process |
| Abstract | To date, solid-state pressureless sintering of silicon carbide powder requires sintering aids and high sintering temperature (>2100. °C) in order to achieve high sintered density (>95% T.D.). Two-step sintering (TSS) method can allow to set sintering temperature lower than that conventionally required. So, pressureless two-step sintering process was successfully applied for solid-state sintering (boron carbide and carbon as sintering additives) of commercial SiC powder at 1980. °C. Microstructure and mechanical properties of TSS-SiC were evaluated and compared to those obtained with the conventional sintering (SSiC) process performed at 2130. °C. TSS-SiC showed finer microstructure and higher flexural strength than SSiC with very similar density (98.4% T.D. for TSS-SiC and 98.6% T.D. for SSiC). © 2014 Elsevier Ltd. |
| Note | cited By 7 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905569591&doi=10.1016%2fj.jeurceramsoc.2014.06.006&partnerID=40&md5=010e5262da5066e16f61550fa9959df8 |
| DOI | 10.1016/j.jeurceramsoc.2014.06.006 |
| Citation Key | Magnani20144095 |
