Solid-state pressureless sintering of silicon carbide below 2000°C

TitleSolid-state pressureless sintering of silicon carbide below 2000°C
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2014
AuthorsMagnani, G., Sico G., Brentari A., and Fabbri Paride
JournalJournal of the European Ceramic Society
KeywordsBoron carbide, Ceramics, Conventional sintering, High sintering temperatures, Mechanical properties, Microstructure, Microstructure and mechanical properties, Pressure-less sintering, Silicon carbide, Silicon carbide powder, Sintering, Sintering temperatures, Two-step sintering process

To date, solid-state pressureless sintering of silicon carbide powder requires sintering aids and high sintering temperature (>2100. °C) in order to achieve high sintered density (>95% T.D.). Two-step sintering (TSS) method can allow to set sintering temperature lower than that conventionally required. So, pressureless two-step sintering process was successfully applied for solid-state sintering (boron carbide and carbon as sintering additives) of commercial SiC powder at 1980. °C. Microstructure and mechanical properties of TSS-SiC were evaluated and compared to those obtained with the conventional sintering (SSiC) process performed at 2130. °C. TSS-SiC showed finer microstructure and higher flexural strength than SSiC with very similar density (98.4% T.D. for TSS-SiC and 98.6% T.D. for SSiC). © 2014 Elsevier Ltd.


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