Solid-state pressureless sintering of silicon carbide below 2000°C

TitleSolid-state pressureless sintering of silicon carbide below 2000°C
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2014
AuthorsMagnani, G., Sico G., Brentari A., and Fabbri Paride
JournalJournal of the European Ceramic Society
Volume34
Pagination4095-4098
ISSN09552219
KeywordsBoron carbide, Ceramics, Conventional sintering, High sintering temperatures, Mechanical properties, Microstructure, Microstructure and mechanical properties, Pressure-less sintering, Silicon carbide, Silicon carbide powder, Sintering, Sintering temperatures, Two-step sintering process
Abstract

To date, solid-state pressureless sintering of silicon carbide powder requires sintering aids and high sintering temperature (>2100. °C) in order to achieve high sintered density (>95% T.D.). Two-step sintering (TSS) method can allow to set sintering temperature lower than that conventionally required. So, pressureless two-step sintering process was successfully applied for solid-state sintering (boron carbide and carbon as sintering additives) of commercial SiC powder at 1980. °C. Microstructure and mechanical properties of TSS-SiC were evaluated and compared to those obtained with the conventional sintering (SSiC) process performed at 2130. °C. TSS-SiC showed finer microstructure and higher flexural strength than SSiC with very similar density (98.4% T.D. for TSS-SiC and 98.6% T.D. for SSiC). © 2014 Elsevier Ltd.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84905569591&doi=10.1016%2fj.jeurceramsoc.2014.06.006&partnerID=40&md5=010e5262da5066e16f61550fa9959df8
DOI10.1016/j.jeurceramsoc.2014.06.006