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The stability of zinc oxide electrodes fabricated by dual ion beam sputtering

TitoloThe stability of zinc oxide electrodes fabricated by dual ion beam sputtering
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1993
AutoriValentini, A., Quaranta F., Penza Michele, and Rizzi F.R.
RivistaJournal of Applied Physics
Volume73
Paginazione1143-1145
ISSN00218979
Abstract

The stability of the electrical and optical properties of dual ion beam sputtered zinc oxide films, with resistivities of 10-3 Ω cm, were investigated. ZnO films were deposited at room temperature by argon ion beam sputtering of a zinc oxide target. Argon or hydrogen/argon mixtures of positive ions were irradiated by the second source on the growing film. After heat treatment in air, no significant changes in the electrical and optical properties are observed for films irradiated by hydrogen/argon ions. ZnO films prepared by this method would be useful in the production of transparent and conductive electrodes for practical use at high temperature.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0001261073&doi=10.1063%2f1.354062&partnerID=40&md5=23b94ce7ebf179683613f640ae5cd4a8
DOI10.1063/1.354062
Citation KeyValentini19931143