High efficiency inverted polymer solar cells with solution-processed ZnO buffer layer

TitleHigh efficiency inverted polymer solar cells with solution-processed ZnO buffer layer
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2015
AuthorsMorvillo, P., Diana R., Ricciardi Rosa, Bobeico E., and Minarini Carla
JournalJournal of Sol-Gel Science and Technology
Volume73
Pagination550-556
ISSN09280707
Keywords4-b]thiophene, Buffer layers, butyric acid, Environmental stability, Film preparation, High electron mobility, Inverted architectures, Inverted polymer solar cells, Metallic films, Optical films, Oxide films, Photovoltaic, Photovoltaic effects, Polymer Solar Cells, Polymers, Solar cells, Solar power generation, Sols, Thieno[3, Thin films, Tin oxides, Volatile fatty acids, Zinc, Zinc compounds, Zinc oxide, ZnO
Abstract

In this work, we report the application of a sol–gel derived ZnO thin film as a buffer layer for high efficiency inverted polymer solar cells. ZnO films are widely used in such devices because they have a relatively high electron mobility, high transparency and environmental stability. The ZnO precursor was prepared by dissolving zinc acetate and ethanolamine in the 2-methoxyethanol. ZnO thin films were then deposited on indium tin oxide (ITO)/glass substrates by spin coating the above solution. Inverted polymer solar cells with the configuration ITO/ZnO/photoactive layer/MoOx/Ag were realized in order to investigate the performance of ZnO thin film. The photoactive layer is a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b;4,5-b′]dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene)-2,6-diyl] (PBDTTT-C) and [6,6]-phenyl C71 butyric acid methyl ester ([70]PCBM) (1:1.5 w/w). We made a comparative study of the photovoltaic behavior of devices with ZnO films deposited using different sol–gel recipes. In particular, we varied the zinc acetate/ethanolamine molar ratio to have ZnO films with different trace amounts of starting materials. In addition we also prepared ZnO films annealed at 200 °C for different times (from 5′ to 60′) in order to evaluate this effect on the trace amount removal. © 2014, Springer Science+Business Media New York.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84925500026&doi=10.1007%2fs10971-014-3514-2&partnerID=40&md5=453c2344aec6ad46b9648b1cf27a5955
DOI10.1007/s10971-014-3514-2