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Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

TitoloInvestigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2010
AutoriSignore, M.A., Valerini D., Rizzo A., Tapfer Leander, Capodieci Laura, and Cappello A.
RivistaJournal of Physics D: Applied Physics
Parole chiaveCrystallinities, Deposited films, Electric conductivity, electrical resistivity, Film growth, Ion bombardment, Ion energies, Ions, Magnetron sputtering, Morphological changes, Nitrides, Nitrogen vacancies, Optical reflectance, Oxygen, Oxygen contamination, Oxygen vacancies, Physical properties, Preferential orientation, rf-Magnetron sputtering, Substrate surface, Substrate voltage, Substrates, Surface roughness, Surface structure, Thin films, zirconium, Zirconium nitride, ZrN films

Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films, thus affecting their physical properties. In this work zirconium nitride films have been deposited by the ion assisted magnetron sputtering technique. The ion energy is controlled by varying the voltage applied to the substrate in the range 0-25 V. The deposited ZrN films are characterized for their structure, surface roughness, oxygen contamination, optical reflectance and electrical resistivity. With increasing substrate voltage crystallinity of the films is enhanced with a preferential orientation of the ZrN grains having the (1 1 1) axis perpendicular to the substrate surface. At the same time, a decrease in electrical resistivity and oxygen contamination content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the observed experimental trends. The role of oxygen contamination decrease and generation of nitrogen vacancies due to ionic assistance have been considered as a possible explanation for the experimental results. © 2010 IOP Publishing Ltd.


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Citation KeySignore2010