| Titolo | Kilovolt, nanosecond, and picosecond electric pulse shaping by using optoelectronic switching |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2010 |
| Autori | S. Amari, El, Kenaan M., Merla Caterina, Vergne B., Arnaud-Cormos D., Leveque P., and Couderc V. |
| Rivista | IEEE Photonics Technology Letters |
| Volume | 22 |
| Paginazione | 1577-1579 |
| ISSN | 10411135 |
| Parole chiave | Electric generators, Electric pulse, Electrical pulse, Frozen waves, High voltage, Linear regime, Negative components, Optical gatings, Optoelectronic switching, Photoconductive semiconductors, Photoconductivity, Pico-second pulse, Picosecond electric pulse, Power modulation, Pulse generators, Pulse shaping circuits, Pulse-shaping, Semiconducting silicon, Semiconducting Silicon Compounds, Semiconductor device manufacture, Semiconductor devices, Spectral pulse shaping, Spectrum analyzers, Subnanosecond, Switching, Switching delay time |
| Abstract | This letter describes subnanosecond electric pulse generation and shaping. The optoelectronic switching of silicon semiconductor devices embedded in a frozen wave generator is obtained in the linear regime. Control of the switching delay time, combined with power modulation of the optical gating signals, enables temporal and spectral pulse shaping. In this way, monocycle nanosecond and/or picosecond pulses with balanced or unbalanced positive and negative components and square electrical pulses with adjustable duration are obtained. © 2010 IEEE. |
| Note | cited By 31 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957920878&doi=10.1109%2fLPT.2010.2073458&partnerID=40&md5=5ddb44a035bb101f436cb76e7bd68485 |
| DOI | 10.1109/LPT.2010.2073458 |
| Citation Key | ElAmari20101577 |
