Efficiency improvement of a-Si solar cells deposited in a single chamber, large area, PECVD reactor

TitoloEfficiency improvement of a-Si solar cells deposited in a single chamber, large area, PECVD reactor
Tipo di pubblicazionePresentazione a Congresso
Anno di Pubblicazione1996
AutoriTerzini, E., Privato C., Avagliano S., Mangiapane P., and Fasolino T.
Conference NameMaterials Research Society Symposium - Proceedings
EditoreMaterials Research Society, Pittsburgh, PA, United States
Conference LocationSan Francisco, CA, USA
Parole chiaveAmorphous silicon, Amorphous silicon solar cells, Annealing, Chemical reactors, Chemical vapor deposition, Device efficiency, energy efficiency, Interface cleaning, Interfaces (materials), Optimization, Plasma applications, Plasma enhanced chemical vapor deposition, Semiconducting silicon, Semiconductor device manufacture, Silicon solar cells

In order to realize large area integrated a-Si modules using a commercial, single chamber, PECVD reactor, an accurate optimization of deposition process for p-i-n solar cell has been performed leading to a 1 cm2 device efficiency value of 10.3%. Besides the efficiency improvements achieved by the insertion of a graded layer at p/i interface and by the introduction of SnO2 Asahi type U substrate, an 'interface cleaning procedure', based on NF3 flushing step, was the key for the cells Voc and fill factor increase. Microcrystalline n+ layer, ZnO/Ag back contact and device thermal annealing gave further contributions to the cell efficiency. Utilizing this technology, a large area p-i-n modules (900 cm2) with an initial efficiency of 8.5% has been manufactured.