| Titolo | Synthesis of wide band gap nanocrystals by ion implantation |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2002 |
| Autori | Borsella, E., C. Fernández de Julián, Garciá M.A., Mattei G., Maurizio C., Mazzoldi P., Padovani S., Sada C., Battaglin G., Cattaruzza E., Gonella F., Quaranta A., D’Acapito F., Tagliente M.A., and Tapfer Leander |
| Rivista | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 191 |
| Paginazione | 447-451 |
| ISSN | 0168583X |
| Parole chiave | Annealing, Dielectric materials, Dielectric substrates, Energy gap, Ion implantation, Nanostructured materials, Photoluminescence, Substrates, Synthesis (chemical), X ray diffraction analysis |
| Abstract | Nanocrystals of wide band gap materials (GaN and In2O3 were synthesized by sequential ion implantation in dielectric substrates, followed by thermal annealing of the samples. Transmission electron microscopy, extended X-ray absorption fine structure spectroscopy and grazing incidence X-ray diffraction analyses confirmed the formation of GaN and In2O3 crystalline nanoparticles. Blue shift of the near-edge photoluminescence (PL) band (quantum confinement effect) was observed for GaN nanocrystals. A strong PL band peaked at 3.35 eV was detected upon excitation of In2O3 nanocrystals at 5.20 eV. © 2002 Elsevier Science B.V. All rights reserved. |
| Note | cited By 18 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036574333&doi=10.1016%2fS0168-583X%2802%2900590-6&partnerID=40&md5=4ed227b0857a5bb1a68e08236d493755 |
| DOI | 10.1016/S0168-583X(02)00590-6 |
| Citation Key | Borsella2002447 |
