PANI-CSA: An easy method to avoid ITO photolithography in PLED manufacturing

TitoloPANI-CSA: An easy method to avoid ITO photolithography in PLED manufacturing
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2005
AutoriVacca, P., Maglione Maria Grazia, Minarini Carla, Salzillo G., Amendola E., Della Sala Dario, and Rubino A.
RivistaMacromolecular Symposia
Volume228
Paginazione263-272
ISSN10221360
Parole chiaveConducting polymers, Doped polyaniline, Electrodes, evaporation, Indium compounds, Light emitting diodes, Optimization, Photolithography, Polyaniline, Spin coating, Ultraviolet spectroscopy, UV patterning, vacuum, X ray diffraction analysis
Astratto

In order to optimize polymer light emitting diode (PLED) performances, devices with holes injected through an Indium Tin Oxide (ITO) / Polyaniline (PANI) electrode into the polymer are much more efficient than devices fabricated with the anode made only by ITO. We demonstrated that by using doped PANI as hole injection layer in a polymer light emitting diode the manufacturing process can become simpler. Indeed, the pattern of conductive layer can be produced without ITO photolithography by UV exposition. As hole transporter layer, Poly(N-vinylcarbazole) (PVK) was spin coated over the doped PANI layer and a layer of tris (8-hydroxy) quinoline aluminum (Alqs) was then thermally evaporated so as to form the electron transport layer. To complete the device structure, Aluminum contacts were deposited onto the organic layers by vacuum evaporation at low pressure. The layers were characterized by X-ray small-angle diffraction, IR Raman and UV-Vis spectroscopies. Devices without PANI and with PANI as HIL were studied. © 2005 WILEY-VCH Verlag GmbH & KGaA, Weinheim.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-25644433512&doi=10.1002%2fmasy.200551024&partnerID=40&md5=b8a5ef01bc75b5257d3468adb0e768a8
DOI10.1002/masy.200551024