| Titolo | Dual-ion-beam sputter deposition of TiN films |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 1991 |
| Autori | Valentini, A., Quaranta F., Penza Michele, Vasanelli L., and Battaglin G. |
| Rivista | Journal of Applied Physics |
| Volume | 69 |
| Paginazione | 7360-7362 |
| ISSN | 00218979 |
| Abstract | A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N+2 ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films. |
| Note | cited By 8 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748922294&doi=10.1063%2f1.347596&partnerID=40&md5=cc2f62d9b2b72603dfbeef08908cb745 |
| DOI | 10.1063/1.347596 |
| Citation Key | Valentini19917360 |
