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Dual-ion-beam sputter deposition of TiN films

TitoloDual-ion-beam sputter deposition of TiN films
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1991
AutoriValentini, A., Quaranta F., Penza Michele, Vasanelli L., and Battaglin G.
RivistaJournal of Applied Physics
Volume69
Paginazione7360-7362
ISSN00218979
Abstract

A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N+2 ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.

Note

cited By 8

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-33748922294&doi=10.1063%2f1.347596&partnerID=40&md5=cc2f62d9b2b72603dfbeef08908cb745
DOI10.1063/1.347596
Citation KeyValentini19917360