Influence of annealing treatments on solution-processed ZnO film deposited on ITO substrate as electron transport layer for inverted polymer solar cells

TitleInfluence of annealing treatments on solution-processed ZnO film deposited on ITO substrate as electron transport layer for inverted polymer solar cells
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2015
AuthorsMorvillo, P., Diana R., Mucci A., Bobeico E., Ricciardi Rosa, and Minarini Carla
JournalSolar Energy Materials and Solar Cells
Volume141
Pagination210-217
ISSN09270248
KeywordsAnnealing, Annealing temperatures, butyric acid, Copolymers, Electric resistance, Electron transport layers, Electron transport properties, Heterojunctions, Inverted architectures, Inverted polymer solar cells, Metallic films, Photovoltaic, Polymer Solar Cells, Polymers, Power conversion efficiencies, Sheet resistance, Sol-gel process, Sol-gels, Solar cells, Solar power generation, Zinc oxide, ZnO
Abstract

In this work we studied the influence of the annealing treatments of a sol-gel derived ZnO electron transport layer deposited on ITO substrate, on the performances of inverted bulk heterojunction polymer solar cells using a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b;4,5-b′]dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiopene)-2,6-diyl] and [6,6]-phenyl C71 butyric acid methyl ester. Since the annealing treatments needed to complete the formation of the solution-processed ZnO film can modify the underlying ITO electrode, we analyzed the performance of the fabricated cells in terms of the properties of ITO and ZnO films. We found a linear relationship between the sheet resistance of the ITO layer and the series resistance of the corresponding device, which strongly influences the fill factor. The best power conversion efficiency (7%) under simulated AM 1.5G illumination of 100 mW/cm2 was achieved for the polymer solar cell fabricated using a ZnO film annealed at 150 °C for only 5 min. Higher annealing temperatures and times increase the sheet resistance of the ITO worsening the device performances. © 2015 Elsevier B.V. All ights reserved.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84931274472&doi=10.1016%2fj.solmat.2015.05.038&partnerID=40&md5=45547401afbed82d41c57b57ed6aaa14
DOI10.1016/j.solmat.2015.05.038