In situ laser recrystallization of Si layers during low-pressure chemical vapor deposition: Recrystallization dynamics and influence of the seed layer

TitleIn situ laser recrystallization of Si layers during low-pressure chemical vapor deposition: Recrystallization dynamics and influence of the seed layer
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2002
AuthorsDella Sala, Dario, Santoni A., Fornarini L., Lancok J., Loreti S., Menicucci I., and Minarini Carla
JournalJournal of Materials Research
Volume17
Pagination2966-2973
ISSN08842914
KeywordsChemical vapor deposition, Grain size and shape, Laser applications, Laser irradiation, Laser recrystallization, Liquid metals, Low pressure chemical vapor deposition, Morphology, Nanostructured materials, Recrystallization (metallurgy), Seed layer, silicon, Solidification, Structure (composition)
Abstract

The growth of polycrystalline silicon on glass by low-pressure chemical vapor deposition and in situ laser induced recrystallization was investigated with the aim to study the influence of the seed layer and the mechanism of the recrystallization dynamics on the structural and morphological properties of the grown film. A seed layer was used to trigger the solidification process of many additional in situ laser-crystallized overlayers. One-dimensional calculations of the thermal flow produced by laser irradiation were used to clarify the complex interaction between the substrate and the molten silicon surface layer during nucleation and growth. The experiments show the relevant role played by the seed layer and the peculiar shaping of the film surface due to the preferential aggregation of molten silicon. Compact polysilicon films with thicknesses up to 4 μm with almost monocrystalline grains of 1-2-μm size were obtained.

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