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Low-temperature laser-CVD thin film growth of SiC from Si2H 6 and C2H2

TitleLow-temperature laser-CVD thin film growth of SiC from Si2H 6 and C2H2
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2003
AuthorsSantoni, A., Lancok J., Loreti S., Menicucci I., Minarini Carla, Fabbri F., and Della Sala Dario
JournalJournal of Crystal Growth
KeywordsAcetylene, Amorphous films, Annealing, Chemical vapor deposition, Crystallization, Excimer lasers, Film growth, Laser beam effects, Low temperature effects, Polycrystalline materials, Silicon carbide, Synthesis (chemical), Thin films, Wide-gap semiconductors, X ray diffraction analysis, X ray photoelectron spectroscopy

SiC thin films have been synthesised by combining low pressure chemical vapour deposition from Si2H6 and C2H 2 at 520°C and in situ KrF-excimer laser annealing. Glancing incidence X-ray analysis showed the quantity of polycrystalline SiC in the laser-irradiated area depends on the mass-flow ratio of the precursor gases. In the region outside the laser spot where the films are amorphous, X-ray photoelectron spectroscopy measurements showed an increased SiC character for low disilane:acetylene mass-flow ratios. © 2003 Published by Elsevier B.V.


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Citation KeySantoni2003272