Low-temperature laser-CVD thin film growth of SiC from Si2H 6 and C2H2

TitleLow-temperature laser-CVD thin film growth of SiC from Si2H 6 and C2H2
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2003
AuthorsSantoni, A., Lancok J., Loreti S., Menicucci I., Minarini Carla, Fabbri F., and Della Sala Dario
JournalJournal of Crystal Growth
Volume258
Pagination272-276
ISSN00220248
KeywordsAcetylene, Amorphous films, Annealing, Chemical vapor deposition, Crystallization, Excimer lasers, Film growth, Laser beam effects, Low temperature effects, Polycrystalline materials, Silicon carbide, Synthesis (chemical), Thin films, Wide-gap semiconductors, X ray diffraction analysis, X ray photoelectron spectroscopy
Abstract

SiC thin films have been synthesised by combining low pressure chemical vapour deposition from Si2H6 and C2H 2 at 520°C and in situ KrF-excimer laser annealing. Glancing incidence X-ray analysis showed the quantity of polycrystalline SiC in the laser-irradiated area depends on the mass-flow ratio of the precursor gases. In the region outside the laser spot where the films are amorphous, X-ray photoelectron spectroscopy measurements showed an increased SiC character for low disilane:acetylene mass-flow ratios. © 2003 Published by Elsevier B.V.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0141819047&doi=10.1016%2fS0022-0248%2803%2901554-9&partnerID=40&md5=3246bc87c9f73dbb545289d69b9e41c1
DOI10.1016/S0022-0248(03)01554-9