In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: Influence of metal diffusion on the film morphology and on the growth rate

TitleIn situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: Influence of metal diffusion on the film morphology and on the growth rate
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2004
AuthorsLoreti, S., Santoni A., Lancok J., Menicucci I., Minarini Carla, and Della Sala Dario
JournalThin Solid Films
Volume458
Pagination1-8
ISSN00406090
KeywordsAnnealing, Chemical vapor deposition, Eutectics, Laser annealing (LA), Laser beam effects, Low-pressure chemical vapour deposition (LPCVD), Metal-induced crystallization, Microelectronics, Polysilicon, Scanning electron microscopy, Solid-phase crystallization (SPC), Thin films, X ray diffraction
Abstract

Polycrystalline silicon films have been grown from Si2H 6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si2H6 dissociation. © 2003 Elsevier B.V. All rights reserved.

Notes

cited By 3

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-2542493119&doi=10.1016%2fj.tsf.2003.10.038&partnerID=40&md5=c01a3890697adf45361be38fde91e3e5
DOI10.1016/j.tsf.2003.10.038