|Title||Metal-induced crystallization of polycrystalline silicon by in-situ excimer laser annealing during low-pressure CVD growth|
|Publication Type||Articolo su Rivista peer-reviewed|
|Year of Publication||2004|
|Authors||Loreti, S., Santoni A., Fryček R., Menicucci I., Minarini Carla, and Della Sala Dario|
|Journal||Materials Science Forum|
|Keywords||Annealing, Carrier mobility, Chemical vapor deposition, Laser-melted silicon, Low-Pressure Chemical Vapor Deposition (LPCVD), Metal-induced Crystallization (MIC), Microelectromechanical devices, Polysilicon, Scanning electron microscopy, Silicon films, X ray diffraction|
Polycrystalline silicon films were grown from Si2H6, by Low-Pressure Chemical Vapor Deposition (LPCVD) at 800K and in-situ laser annealing of amorphous silicon seed layers deposited on different metallic films. According to the Metal Induced Crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. The influence of different metals on the obtained morphologies and crystalline phases were investigated by X-ray diffraction and Scanning Electron Microscopy. The experimental results show that the film morphology depends strongly on the metal used to promote the silicon crystallization.
cited By 2; Conference of Progress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V ; Conference Date: 15 September 2003 Through 19 September 2003; Conference Code:63331