Metal-induced crystallization of polycrystalline silicon by in-situ excimer laser annealing during low-pressure CVD growth

TitleMetal-induced crystallization of polycrystalline silicon by in-situ excimer laser annealing during low-pressure CVD growth
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2004
AuthorsLoreti, S., Santoni A., Fryček R., Menicucci I., Minarini Carla, and Della Sala Dario
JournalMaterials Science Forum
Volume453-454
Pagination43-46
ISSN02555476
KeywordsAnnealing, Carrier mobility, Chemical vapor deposition, Laser-melted silicon, Low-Pressure Chemical Vapor Deposition (LPCVD), Metal-induced Crystallization (MIC), Microelectromechanical devices, Polysilicon, Scanning electron microscopy, Silicon films, X ray diffraction
Abstract

Polycrystalline silicon films were grown from Si2H6, by Low-Pressure Chemical Vapor Deposition (LPCVD) at 800K and in-situ laser annealing of amorphous silicon seed layers deposited on different metallic films. According to the Metal Induced Crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. The influence of different metals on the obtained morphologies and crystalline phases were investigated by X-ray diffraction and Scanning Electron Microscopy. The experimental results show that the film morphology depends strongly on the metal used to promote the silicon crystallization.

Notes

cited By 2; Conference of Progress in Advanced Materials and Processes: Proceedings of the Fifth Jugoslav Materials Research Society, YUCOMAT V ; Conference Date: 15 September 2003 Through 19 September 2003; Conference Code:63331

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