Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates

TitleExcimer laser induced crystallization of amorphous silicon on flexible polymer substrates
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2005
AuthorsImparato, A., Minarini Carla, Rubino A., Tassini P., Villani Fulvia, Della Sala Dario, Amendola E., Kunst M., Neitzert H.-C., and Bellone S.
JournalThin Solid Films
Volume487
Pagination58-62
ISSN00406090
KeywordsAmorphous silicon, Crystallization, Dehydrogenation, Excimer lasers, Glass transition, Hydrogenated amorphous silicon, Laser beam effects, Laser pulses, Optical properties, Optimum deposition, Plasma enhanced chemical vapor deposition, Polyethylene terephthalates, Polymers, Radiation energy, Structural characterizations, X ray diffraction
Abstract

Laser crystallization of a-Si:H on PES, PET and AryLite™ polymer substrates is reported. For each material, the glass transition temperature Tg and the coefficient of thermal expansion have been evaluated, to determine the optimum deposition and crystallization processes conditions. 1000-Å thick intrinsic amorphous silicon films have been deposited on the substrates by Plasma Enhanced Chemical Vapour Deposition in the temperature range of 120-250°C. Dehydrogenation and crystallization have been obtained by high energy (10 J) XeCl pulsed excimer laser. The irradiation conditions have been varied to study their influence on the electrical and optical properties of crystallized material. Structural characterization has been performed by X-ray Diffraction. Increasing the radiation energy densities up to 220 mJ/cm2 crystallites sizes up to 750 Å have been obtained. © 2005 Elsevier B.V. All rights reserved.

Notes

cited By 8; Conference of International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications ; Conference Date: 5 September 2004 Through 10 September 2004; Conference Code:65304

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-22944447459&doi=10.1016%2fj.tsf.2005.01.035&partnerID=40&md5=44a2a36e59b6c2b150f6ed351b9a877b
DOI10.1016/j.tsf.2005.01.035