Photoresponse of pentacene-based transistors

TitlePhotoresponse of pentacene-based transistors
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2014
AuthorsLoffredo, Fausta, Bruno A., De Girolamo Del Mauro Anna, Grimaldi I.A., Miscioscia Riccardo, Nenna G., Pandolfi G., Petrosino M., Villani Fulvia, Minarini Carla, and Facchetti A.
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Pagination460-466
Abstract

Organic thin film phototransistor (OPTs) devices in bottom-gate/top-contact configuration were fabricated and used as analytic system to study the electrical and optical properties of pentacene. The channel of the OTFT devices was illuminated by laser radiation of wavelength 670 nm and the effect of irradiation on the electrical responses of the devices was investigated at different temperatures and incident optical powers. The photoresponse and the electrical parameters of the devices (mobility, threshold voltages and on/off ratios - ION/IOFF) were evaluated in order to investigate the relationship between the light sensing behavior of the phototransistors and their electrical performances. Moreover, the OPT's time-resolved electrical response to light irradiation was modelled to decouple the fast-varying photoexcitation effects from slow bias stress decays in order to investigate the reversibility properties, the time stability of electrical responses and the photocurrent. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84894272111&partnerID=40&md5=dd57cf462454e84a461047161f340b38
DOI10.1002/pssa.201300395