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Effect of the substrate temperature on zirconium oxynitride thin films deposited by water vapour-nitrogen radiofrequency magnetron sputtering

TitoloEffect of the substrate temperature on zirconium oxynitride thin films deposited by water vapour-nitrogen radiofrequency magnetron sputtering
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2010
AutoriSignore, M.A., Rizzo Antonella, Tapfer Leander, Piscopiello E., Capodieci Laura, and Cappello A.
RivistaThin Solid Films
Volume518
Paginazione1943-1946
Parole chiaveAmorphous matrices, Atmospheric temperature, Atomic force microscopy, Atomic spectroscopy, Atoms, Crystalline particles, Cubic phase, Diffraction, Ions, Magnetron sputtering, Magnetrons, Mass spectrometers, Nano-sized, Nitrides, Oxygen, Oxygen incorporation, Oxynitrides, Phase transitions, Radio frequencies, Radio frequency magnetron sputtering, Reactive magnetron sputtering, Room temperature, Secondary emission, Secondary ion mass spectrometry, Secondary ion mass spectroscopy, Spectrometry, Substrate temperature, Transmission electron microscopy, Water vapour, Water vapour atmosphere, Working temperatures, X ray diffraction, X ray diffraction analysis, zirconium
Abstract

ZrNx films were deposited by radiofrequency reactive magnetron sputtering technique in nitrogen and water vapour atmosphere varying the working temperature from room temperature to 600 °C. The films' physical properties were investigated using X-ray diffraction, Secondary Ion Mass Spectroscopy, Atomic Force Microscopy and Transmission Electron Microscopy. It was found that the increase of temperature caused a decrease in the oxygen incorporation and a transition from cubic phase of Zr2ON2 to ZrN one. The formation of nanosized crystalline particles dispersed in the amorphous matrix was observed. © 2009 Elsevier B.V. All rights reserved.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-74249102862&doi=10.1016%2fj.tsf.2009.07.153&partnerID=40&md5=ffe9e6babe0a221d5eed9ce27298bc56
DOI10.1016/j.tsf.2009.07.153
Citation KeySignore20101943