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Influence of Process Parameters on Properties of Non-Reactive RF Magnetron-Sputtered Indium Tin Oxide Thin Films Used as Electrodes for Organic Light-Emitting Diodes

TitoloInfluence of Process Parameters on Properties of Non-Reactive RF Magnetron-Sputtered Indium Tin Oxide Thin Films Used as Electrodes for Organic Light-Emitting Diodes
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2024
AutoriDiletto, Claudia, Nunziata Fiorita, Aprano Salvatore, Migliaccio Ludovico, Maglione Maria Grazia, Rubino Alfredo, and Tassini Paolo
RivistaCrystals
Volume14
Type of ArticleArticle
ISSN20734352
Abstract

Indium tin oxide (ITO) is a transparent conductive oxide (TCO) commonly used in the realization of optoelectronic devices needing at least a transparent electrode. In this work, ITO thin films were deposited on glass substrates by non-reactive RF magnetron sputtering, investigating the effects of power density, sputtering pressure, and substrate temperature on the electrical, optical, and structural properties of the as-grown films. High-quality films, in terms of crystallinity, transparency, and conductivity were obtained. The 120 nm thick ITO films grown at 225 °C under an argon pressure of 6.9 mbar and a sputtering power density of 2.19 W/cm2 without post-annealing treatments in an oxidizing environment showed an optical transmittance near 90% at 550 nm and a resistivity of  (Formula presented.)   (Formula presented.)  cm. This material was applied as the electrode of simple-structure organic light-emitting diodes (OLEDs). © 2024 by the authors.

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Cited by: 0; All Open Access, Gold Open Access

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85205101241&doi=10.3390%2fcryst14090776&partnerID=40&md5=b7a9523a66ca99430be4d9a6be4c1552
DOI10.3390/cryst14090776
Citation KeyDiletto2024