Investigation of multi-layered graphene/silicon Schottky junction in oxidizing atmosphere

TitleInvestigation of multi-layered graphene/silicon Schottky junction in oxidizing atmosphere
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2021
AuthorsRicciardella, Filiberto, Nigro Maria Arcangela, Miscioscia Riccardo, Miglietta Maria Lucia, and Polichetti Tiziana
JournalJournal of Physics D: Applied Physics
Volume54
Issue37
Pagination375104
Date PublishedApr-09-2022
ISSN00223727
KeywordsChemical sensors, Chemiresistors, Chromium compounds, Gold compounds, Graphene, Heterojunctions, Multi-layered graphene, Nitrogen oxides, Oxidizing atmosphere, Rectifying devices, Schottky barrier diodes, Schottky barrier heights, Schottky junctions, Silica, silicon, Solution-processed, Technological process
Abstract

In this study, we investigate a Schottky junction based on solution-processed multilayered graphene (MLG). We present a rectifying device obtained with a straightforward approach, that is drop-casting a few microliters of MLG solution simultaneously onto Si, Si-SiO2 and Si-SiO2-Cr/Au surface. Monitoring the modulation of Schottky barrier height while operating in reverse bias, we study the behavior of such prepared MLG-Si/junction (MLG-Si/J) when exposed to oxidizing atmosphere, especially to nitrogen oxide (NO2). We finally compare the sensing behavior of MLG-Si/J at 1 ppm of NO2 with that of a chemiresistor-based on similarly prepared solution-processed MLG. Our study thus opens the path towards low-cost highly sensitive graphene-based heterojunctions advantageously fabricated without any complexity in the technological process. © 2021 The Author(s). Published by IOP Publishing Ltd.

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URLhttps://iopscience.iop.org/article/10.1088/1361-6463/ac0d71
DOI10.1088/1361-6463/ac0d71
Short TitleJ. Phys. D: Appl. Phys.