|Title||Evaporated MoOx as general back-side hole collector for solar cells|
|Publication Type||Articolo su Rivista peer-reviewed|
|Year of Publication||2020|
|Authors||Bobeico, E., Mercaldo L.V., Morvillo P., Usatii I., Noce M.D., Lancellotti L., Sasso C., Ricciardi R., and Veneri P.D.|
Substoichiometric molybdenum oxide (MoOx) has good potential as a hole-collecting layer in solar cells. In this paper, we report on the application of ultrathin evaporated MoOx as a hole collector at the back side of two distinct photovoltaic technologies: polymeric and silicon heterojunction (SHJ). In the case of polymer solar cells, we test MoOx as a hole transport layer in devices with inverted architecture. The higher transparency of the MoOx film, compared to the commonly used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), allows an enhanced back reflected light into the photoactive layer, thus boosting the photogeneration, as found from the illuminated J-V and external quantum efficiency (EQE) curves. The higher fill factor (FF) of the MoOx-based device also suggests an improved charge collection efficiency compared to the cells with PEDOT:PSS. As for SHJ solar cells, we show that MoOx offers the means for dopant-free hole collection with both p-type and n-type Si wafers. In the present comparison over planar test structures with Ag back reflecting electrodes, we observe an efficiency gain of approximately 1% absolute against a baseline with a conventional p-type amorphous silicon hole collector. The gain is linked to the increased VOC, which is likely due to the reduced recombination at the Si wafer. © 2020 by the authors. Licensee MDPI, Basel, Switzerland. All right reserved.
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