| Title | GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient |
|---|---|
| Publication Type | Articolo su Rivista peer-reviewed |
| Year of Publication | 2017 |
| Authors | Döscher, H., Hens P., Beyer A., Tapfer Leander, Volz K., and Stolz W. |
| Journal | Journal of Crystal Growth |
| Volume | 464 |
| Pagination | 2-7 |
| ISSN | 00220248 |
| Keywords | Band structure engineering, Composite films, Compositional analysis, Epitaxial growth, Film preparation, Gallium alloys, Gallium arsenide, Growth models, High resolution transmission electron microscopy, High resolution X ray diffraction, Metal-organic vapor phase epitaxy, Metallorganic vapor phase epitaxy, Scanning electron microscopy, Scanning transmission electron microscopy, Semi conducting III-V materials, Semiconducting gallium, Semiconducting gallium compounds, Semiconductor quantum wells, Surface configuration, Transmission electron microscopy, Vapor phase epitaxy, X ray diffraction, X ray diffraction analysis |
| Abstract | The challenge to embed a single monolayer of phosphorus during epitaxial gallium arsenide (GaAs) growth triggers numerous questions regarding practical preparation, effective analysis, and fundamental consideration of the resulting interlayers. Beyond better understanding of III-V heterointerface formation processes, precise interlayer incorporation may enable enhanced interface design, effective diffusion barriers, and advanced band structure engineering. We employ metalorganic vapor phase epitaxy (MOVPE) in various growth modes (continuous, with interruptions, pulsed, surface exchange) targeting the most abrupt incorporation of thinnest GaP films in the GaAs(100) matrix. The intensities of higher order interference fringes in high resolution X-ray diffraction (HR-XRD) serve as a measure of the effective GaP x As 1−x film thickness and P concentration, which is compared to compositional analysis based on scanning transmission electron microscopy (STEM). In situ reflection anisotropy spectroscopy (RAS) provided us with insights to the GaAs(100) surface configurations relevant during the P interlayer preparation. © 2016 Elsevier B.V. |
| Notes | cited By 5 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028241681&doi=10.1016%2fj.jcrysgro.2016.10.055&partnerID=40&md5=4252d0745aa0b01e633b761dcb077ea3 |
| DOI | 10.1016/j.jcrysgro.2016.10.055 |
| Citation Key | Döscher20172 |
