Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells

TitleAnalytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2007
AuthorsDaliento, S., Mele L., Bobeico E., Lancellotti L., and Morvillo P.
JournalSolar Energy Materials and Solar Cells
Volume91
Pagination707-713
ISSN09270248
KeywordsCell parameters, Device modeling, Electric current measurement, Electron emission, Mathematical models, Saturation currents, Silicon solar cells, Surface recombination velocity, Surface treatment
Abstract

A new analytical model is used to describe the emitter of silicon solar cells in order to gain information on the surface recombination velocity S. The procedure takes advantage of the combined use of experimental measurements, done to determine the emitter saturation current Joe, and analytical modelling to relate Joe to S. Several experiments have been carried out on silicon solar cells having different emitter profiles subjected to various surface treatments. The influence of the surface on significant cell parameters has been analysed. © 2007 Elsevier B.V. All rights reserved.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-33947270837&doi=10.1016%2fj.solmat.2006.12.007&partnerID=40&md5=a687bc4247911f63b36805d637d6fc55
DOI10.1016/j.solmat.2006.12.007