Simple low-cost technology of silicon solar cells and PV modules fabrication

TitleSimple low-cost technology of silicon solar cells and PV modules fabrication
Publication TypePresentazione a Congresso
Year of Publication2009
AuthorsBruk, L., Simashkevich A., Sherban D., Usatii Yu., Morvillo P., Bobeico E., and Fedorov. V.
Conference NameTechnical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
Conference LocationHouston, TX
KeywordsActive area, Antireflection coatings, Back surface fields, biofuels, Diffusion coatings, Double diffusion, Fabrication, Fluidics, Frontal junction, ITO, Low temperatures, Low-cost technology, N-Si wafers, nanotechnology, P-n junction, PV modules, Renewable energy resources, Semiconducting silicon, Semiconductor junctions, Si surfaces, Silicon wafers, SIS structures, Solar cells, Spray pyrolysis, Spray technique, Substrate temperature, Transmission coefficients, Visible range

Solar cells (SC) fabricated on the basis of semiconductor-insulator- semiconductor (SIS) structures are obtained by spraying deposition of ITO layers on a Si surface. Films with conductivity 4.7·103Ohm -1cm-1and the transmission coefficient of 87% in the visible range of the spectrum were obtained from solutions containing 90% InCl3 and 10% SnCL4 at the substrate temperature ∼450°C. For SIS structures fabrication nSi wafers oriented in the (100) plane with the concentration ∼1015cm-3-10 16cm-3 were used as substrate. A back surface field (BSF) region has been fabricated at the rear contact. The efficiency of 10.11 % was obtained for solar cells with active area of 24cm2 in AM 1.5 conditions. These structures containing only isotype junctions are very promising, as it is not necessary to obtain a p-n junction. Their advantages are the following: the frontal junction is obtained with a simple spray technique at low temperatures; the double diffusion process is not necessary; the frontal ITO layer is both the collecting electrode and antireflection coating.