| Title | Dual-ion-beam sputtering technique for the production of hydrogenated amorphous silicon |
|---|---|
| Publication Type | Articolo su Rivista peer-reviewed |
| Year of Publication | 1984 |
| Authors | Scaglione, S., Coluzza C., Della Sala Dario, Mariucci L., Frova A., and Fortunato G. |
| Journal | Thin Solid Films |
| Volume | 120 |
| Pagination | 215-222 |
| ISSN | 00406090 |
| Keywords | INFRARED RADIATION - Absorption, Ion beams, Semiconducting silicon, SEMICONDUCTOR MATERIALS - Amorphous, Sputtering |
| Abstract | We describe here the dual-ion-beam sputtering method for the production of hydrogenated amorphous silicon. The spatial distribution of the ion beams was tested and correlated to the transport properties of the films. Visible and IR absorption measurements were also used to characterize the material. © 1984. |
| Notes | cited By 5 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0021504994&doi=10.1016%2f0040-6090%2884%2990297-9&partnerID=40&md5=00d4056e10351f30c34bd6c6464e4bfa |
| DOI | 10.1016/0040-6090(84)90297-9 |
| Citation Key | Scaglione1984215 |
