Characterisation of thin amorphous silicon films with multiple internal reflectance spectroscopy

TitleCharacterisation of thin amorphous silicon films with multiple internal reflectance spectroscopy
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication1996
AuthorsFameli, G., Della Sala Dario, Roca F., and Gerardi C.
JournalJournal of Non-Crystalline Solids
Volume198-200
Pagination69-72
ISSN00223093
KeywordsAmorphous films, Amorphous silicon, Bonding, Characterization, Chemical vapor deposition, Crystalline silicon, Film growth, Film growth mechanism, Hydrogen bonds, Infrared multiple internal reflectance spectroscopy, infrared spectroscopy, Plasma applications, Reflection, Stretching bands, Substrates, Thin amorphous silicon films
Abstract

Infrared multiple internal reflection spectroscopy has been applied to the characterisation (ex situ) of thin amorphous silicon layers on crystalline silicon substrates. The specimens are tightly clamped against a Ge-prism with a 45° bevel angle for the entrance and exit sides, allowing for 25 multiple internal reflections. The stretching bands of SiHn bonds in amorphous Si are detected over a range of film thickness from 3 to 600 nm. Very thin films (with thickness less than 50 nm) exhibit different hydrogen bonding compared to the thicker ones, due to sublayers with different bonding configurations.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0030563545&doi=10.1016%2f0022-3093%2895%2900660-5&partnerID=40&md5=dabac778f9e48ed954b9d305a7cde3a4
DOI10.1016/0022-3093(95)00660-5