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Novel two-pass excimer laser crystallization process to obtain homogeneous large grain polysilicon

TitleNovel two-pass excimer laser crystallization process to obtain homogeneous large grain polysilicon
Publication TypePresentazione a Congresso
Year of Publication2000
AuthorsMariucci, L., Carluccio R., Pecora A., Foglietti V., Fortunato G., and Della Sala Dario
Conference NameMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society, Warrendale, PA, United States
Conference LocationSan Francisco, CA, USA
KeywordsAtomic force microscopy, Crystallization, Excimer lasers, Grain growth, Polysilicon thin film transistor, Scanning electron microscopy, Semiconducting silicon, Sequential lateral solidification, Super lateral growth, Thin film transistors, Two pass excimer laser crystallization
Abstract

New approach to control the lateral growth mechanism through the opportune spatial modulation of the absorbed laser energy and with a two-pass excimer laser crystallization process is presented. In the first pass, spatial modulation of the light intensity has been obtained by irradiating the sample through a patterned mask in contact with the sample. Lateral growth is triggered when the irradiated regions are fully melted and a lateral extension of the grains in excess to 1 μm has been observed for samples irradiated at RT. In order to homogeneously crystallize the sample, the film can be re-irradiated (second pass) without the mask. By using opportune energy densities it can be induced a complete melting of the residual a-Si regions (masked areas during the first pass), while partially melting the polysilicon regions (unmasked areas during the first pass). Different mask geometries have been investigated and for optimized conditions, the sample area can be fully covered with laterally grown grains. The proposed novel technique can be rather attractive for polysilicon TFT fabrication, being characterized by only a two laser-shot process and wide energy density windows.

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0033691609&partnerID=40&md5=f61bcec33b57f476ed50986a227d5e5c
Citation KeyMariucci2000175