| Title | Synthesis and characterization of titanium and zirconium oxynitride coatings |
|---|---|
| Publication Type | Articolo su Rivista peer-reviewed |
| Year of Publication | 2009 |
| Authors | Rizzo, A., Signore M.A., Mirenghi L., and Di Luccio Tiziana |
| Journal | Thin Solid Films |
| Volume | 517 |
| Pagination | 5956-5964 |
| ISSN | 00406090 |
| Keywords | Argon, Atoms, Compositional analysis, Crystal atomic structure, Cubic structure, Diffraction, Electron spectroscopy, Film preparation, Film structure, Multilayer films, Multilayer growth, Multilayer structures, Multilayers, Nitrides, Nitrogen, Nitrogen atmospheres, Nitrogen atom, Nitrogen vacancies, Oxygen, Oxygen atom, Oxygen vacancies, Oxynitride, Oxynitride layers, Photoelectricity, Photoionization, Photons, Radio frequency magnetron sputtering, Room temperature, Satellite peaks, Si (100) substrate, Spectrum Analysis, Sputtering process, Stacked structure, Stoichiometry, Structural analysis, Synthesis and characterization, Titanium, Titanium oxynitride, X ray diffraction, X ray diffraction analysis, X ray photoelectron spectroscopy, X rays, zirconium, [A] Growth models |
| Abstract | Thin films of zirconium oxynitride (ZrNO) and titanium oxynitride (TiNO) have been deposited onto Si(100) substrates at room temperature by radiofrequency magnetron sputtering in an argon-oxygen-nitrogen atmosphere. Single oxynitride layers have been stacked to obtain a multilayer structure. The film structure has been determined by X-ray diffraction while compositional analysis has been performed by X-photoelectrons spectroscopy. Structural analysis has shown that TiNO can be represented as a cubic structure where oxygen atoms replace nitrogen ones while ZrNO can be described as a cubic ZrO2 where nitrogen atoms replace oxygen ones. Besides the main peak, the multilayer films show satellite peaks, proving the formation of the stacked structure. The final films stoichiometry has been explained by a growth model. It establishes that in TiNO films the nitrogen vacancies filling by reactive reactions with oxygen atoms is favourite while for ZrNO films the oxygen vacancies filling by energetic nitrogen atoms is more likely to happen. The different behaviour between TiNO and ZrNO is further confirmed during the multilayer growth. © 2009 Elsevier B.V. All rights reserved. |
| Notes | cited By 39 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-67449115796&doi=10.1016%2fj.tsf.2009.03.131&partnerID=40&md5=f1850c1457d9372f98cbaf9e958d5838 |
| DOI | 10.1016/j.tsf.2009.03.131 |
| Citation Key | Rizzo20095956 |
