| Title | Carrier localization and photoluminescence in porous silicon |
|---|---|
| Publication Type | Articolo su Rivista peer-reviewed |
| Year of Publication | 1999 |
| Authors | Ninno, D., Iadonisi G., and Buonocore F. |
| Journal | Solid State Communications |
| Volume | 112 |
| Pagination | 521-525 |
| ISSN | 00381098 |
| Keywords | Carrier localization, Charge carriers, Nanostructured materials, Photoluminescence, Porous silicon, Semiconductor quantum wires |
| Abstract | We show that the optical absorption and emission energies in porous silicon can be accounted for in a quantum wire confinement model where both the electron and the hole are localized by lateral surface wire undulations. Localization energies for both the particles have been numerically calculated within the effective mass approximation showing that there exists a limited class of wire geometries which are consistent with porous silicon optical and structure analysis data. |
| Notes | cited By 18 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033204569&doi=10.1016%2fS0038-1098%2899%2900308-7&partnerID=40&md5=33a6e133c61274d7a22f5f7bd7e11905 |
| DOI | 10.1016/S0038-1098(99)00308-7 |
| Citation Key | Ninno1999521 |
