Theory for semiconductor nanostructure reactivity to gas environment

TitleTheory for semiconductor nanostructure reactivity to gas environment
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2000
AuthorsNinno, D., Iadonisi G., Buonocore F., Cantele G., and Di Francia G.
JournalSensors and Actuators, B: Chemical
Volume68
Pagination17-21
ISSN09254005
KeywordsBoundary conditions, Chemical sensors, Energy absorption, Mathematical models, Nanostructure reactivity, Nanostructured materials, Optical properties, Oxygen, Peak position shift, Photoluminescence, Photoluminescence quenching, Porous silicon, Quenching, Semiconductor materials, Surface chemistry, Variational techniques
Abstract

A theoretical model has been developed to link the nanostructure geometry of porous silicon to its optical properties. Light emission and absorption energies have been calculated within a variational scheme, which includes a position-dependent boundary condition that reflects the surface chemistry. We show that the results of our measurements of both the photoluminescence (PL) quenching and peak position shift in the presence of oxygen can be accounted for by the theory. The model can be considered as a first building block of a general theory governing the functioning of semiconductor nanostructure-based gas sensors.

Notes

cited By 8; Conference of Proceedings of Eurosensors XIII ; Conference Date: 12 September 1999 Through 15 September 1999; Conference Code:57382

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0034250398&doi=10.1016%2fS0925-4005%2800%2900441-X&partnerID=40&md5=7d4cd05689b2624f987329ec761541d9
DOI10.1016/S0925-4005(00)00441-X