|Title||Impurity and topological surface states in porous silicon|
|Publication Type||Articolo su Rivista peer-reviewed|
|Year of Publication||2000|
|Authors||Ninno, D., Buonocore F., Cantele G., and Iadonisi G.|
|Journal||Physica Status Solidi (A) Applied Research|
|Keywords||Approximation theory, Binding energy, Charge carriers, Electronic density of states, Impurities, Nanostructured materials, Porous silicon, Quantum nanostructure, Semiconductor quantum wires, Spectroscopic analysis, Surface photovoltage spectroscopy, Surface properties, Trapping states|
We have developed a method, based on the effective mass approximation, for calculating electronic states in an arbitrarily shaped quantum nanostructure. Modelling the average porous silicon nanostructure with a deformed quantum wire, the calculated shallow impurity binding energies are in good agreement with surface photovoltage spectroscopy data. We have also studied a new type of surface carrier localization due to nanostructure surface geometrical irregularities. The implications of the existence of these trapping states are discussed for porous silicon.
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