Impurity and topological surface states in porous silicon

TitleImpurity and topological surface states in porous silicon
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2000
AuthorsNinno, D., Buonocore F., Cantele G., and Iadonisi G.
JournalPhysica Status Solidi (A) Applied Research
Volume182
Pagination285-289
ISSN00318965
KeywordsApproximation theory, Binding energy, Charge carriers, Electronic density of states, Impurities, Nanostructured materials, Porous silicon, Quantum nanostructure, Semiconductor quantum wires, Spectroscopic analysis, Surface photovoltage spectroscopy, Surface properties, Trapping states
Abstract

We have developed a method, based on the effective mass approximation, for calculating electronic states in an arbitrarily shaped quantum nanostructure. Modelling the average porous silicon nanostructure with a deformed quantum wire, the calculated shallow impurity binding energies are in good agreement with surface photovoltage spectroscopy data. We have also studied a new type of surface carrier localization due to nanostructure surface geometrical irregularities. The implications of the existence of these trapping states are discussed for porous silicon.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0034428622&doi=10.1002%2f1521-396X%28200011%29182%3a1%3c285%3a%3aAID-PSSA285%3e3.0.CO%3b2-G&partnerID=40&md5=ca4140fcfe2b21eba61a3cd1571f5c6b
DOI10.1002/1521-396X(200011)182:1<285::AID-PSSA285>3.0.CO;2-G