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Fast growth of polycrystalline graphene by chemical vapor deposition of ethanol on copper

TitleFast growth of polycrystalline graphene by chemical vapor deposition of ethanol on copper
Publication TypePresentazione a Congresso
Year of Publication2014
AuthorsFaggio, G., Capasso A., Malara A., Leoni Enrico, Nigro M.A., Santangelo S., Messina G., Dikonimos T., Buonocore F., and Lisi N.
Conference Name2014 IEEE 9th Nanotechnology Materials and Devices Conference, NMDC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN Number9781479980604
KeywordsChemical vapor deposition, Chemical vapor depositions (CVD), Conductive films, Copper, Deposition, Device properties, Electropolished, Ethanol, Graphene, methane, Optimal properties, Polycrystalline graphene, Process condition, Process parameters, Transparent conductive films, Vapor deposition

High conductive graphene films can be grown on metal foils by chemical vapor deposition (CVD). We here analyzed the use of ethanol, an economic precursor, which results also safer than commonly-used methane. A comprehensive range of process parameters were explored in order to obtain graphene films with optimal characteristics in view of their use in optoelectronics and photovoltaics. Commercially-available and electro-polished copper foils were used as substrates. By finely tuning the CVD conditions, we obtained few-layer (2-4) graphene films with good conductivity (∼500 Ohm/sq) and optical transmittance around 92-94% at 550 nm on unpolished copper foils. The growth on electro-polished copper provides instead predominantly mono-layer films with lower conductivity (≥1000 Ohm/sq) and with a transmittance of 97.4% at 550 nm. As for the device properties, graphene with optimal properties as transparent conductive film were produced by CVD on standard copper with specific process conditions. © 2014 IEEE.

Citation KeyFaggio201469