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Annealing free, high quality CVD graphene growth and transfer

TitleAnnealing free, high quality CVD graphene growth and transfer
Publication TypePresentazione a Congresso
Year of Publication2017
AuthorsBrajpuriya, R., Dikonimos T., Buonocore F., Lisi N., Rattan S., Jain V.K., and Verma A.
Conference NameSpringer Proceedings in Physics
PublisherSpringer Science and Business Media, LLC
ISBN Number9783319290959
KeywordsCharacterization, Chemical vapor deposition, Chemical vapor depositions (CVD), Copper, Defect density, Deposition, Graphene, Growth conditions, Large-scale applications, Low defect densities, Organic molecules, Polycrystalline copper, Structural and optical characterizations, Synthesis method, Thin films, Vapor deposition

Among the different graphene synthesis methods, chemical vapor deposition of graphene on low cost copper foil shows great promise for large scale applications. Here we report on the growth and transfer of uniform and continuous large-sized thin-films composed of single- and few-layered graphene. The foils were grown by chemical vapor deposition (CVD) on polycrystalline copper (Cu) foils at low pressure using ethanol and were transferred onto the destination substrates using a cyclododecane supporting layer. Structural and optical characterizations indicate that the graphene films are composed of single or few layers depending on the growth conditions and exhibit low defect density. The graphene films can be transferred to arbitrary substrates with the help of a green transfer method based on an organic molecule, cyclododecane. © Springer International Publishing Switzerland 2017.

Citation KeyBrajpuriya2017325