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High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer, Potì, B., Tagliente M.A., and Passaseo A. , Journal of Non-Crystalline Solids, Volume 352, Number 23-25, p.2332-2334, (2006)

Carbon nanotubes growth by HFCVD: Effect of the process parameters and catalyst preparation, Makris, Th. Dikonimos, Giorgi R., Lisi N., Pilloni L., Salernitano E., Sarto F., and Alvisi Marco , Diamond and Related Materials, Volume 13, Number 2, p.305-310, (2004)

Microstructural characterization of SiC-SiC joint by Raman spectroscopy, Magnani, G., Brillante A., Farina L., and Beaulardi L. , Journal of the American Ceramic Society, Volume 87, Number 4, p.651-655, (2004)

Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD, Tagliente, M.A., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Physics D: Applied Physics, Volume 36, Number 10 A, p.A192-A197, (2003)

Grain boundary location control by patterned metal film in excimer laser crystallized polysilicon, Mariucci, L., Carluccio R., Pecora A., Fortunato G., Massussi F., Foglietti V., Della Sala Dario, and Stoemenos J. , Diffusion and Defect Data Pt.B: Solid State Phenomena, Volume 67, Schwabisch Gmund, Ger, p.175-180, (1999)

Long-term structural stability of PMMA-based gel polymer electrolytes, Quartarone, E., Tomasi C., Mustarelli P., Appetecchi Giovanni Battista, and Croce F. , Electrochimica Acta, Volume 43, Number 10-11, p.1435-1439, (1998)

Low temperature growth of r.f. reactively planar magnetron-sputtered AlN films, Penza, Michele, De Riccardis Maria Federica, Mirenghi L., Tagliente M.A., and Verona E. , Thin Solid Films, Volume 259, Number 2, p.154-162, (1995)