In surface segregation during growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy, Waltereit, P., Brandt O., Ploog K.H., Tagliente M.A., and Tapfer Leander , Physical Review B - Condensed Matter and Materials Physics, Volume 66, Number 16, p.1653221-1653226, (2002)

Theoretical calculations of shallow impurity states in deformed quantum wires with an application to porous silicon, Buonocore, F., Ninno D., and Iadonisi G. , Physical Review B - Condensed Matter and Materials Physics, Volume 62, Number 16, p.10914-10917, (2000)