Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD, Tagliente, M.A., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Physics D: Applied Physics, Volume 36, Number 10 A, p.A192-A197, (2003)

Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy, Brandt, O., Waltereit P., Dhar S., Jahn U., Sun Y.J., Trampert A., Ploog K.H., Tagliente M.A., and Tapfer Leander , Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume 20, Number 4, Santa Fe, NM, p.1626-1639, (2002)

Characterization of transparent and conductive electrodes of indium tin oxide thin films by sequential reactive evaporation, Penza, Michele, Cozzi S., Tagliente M.A., Mirenghi L., Martucci C., and Quirini A. , Thin Solid Films, Volume 349, Number 1, p.71-77, (1999)

Photoelectrochemistry of the insertion compounds NaxInSe and LixInSe, Varsano, F., Tonti D., Decker F., and Cattarin S. , Solid State Ionics, Volume 92, Number 1-2, p.55-63, (1996)